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may 2011 doc id 13845 rev 2 1/16 16 stp20nm65n STF20NM65N n-channel 650 v, 0.250 ? , 15 a to-220, to-220fp second generation mdmesh? power mosfet features 100 % avalanche tested low input capacitance and gate charge low gate input resistance application switching applications description these devices are n-channel power mosfets realized using the second generation mdmesh? technology. this revolutionary power mosfet associates a new vertical structure to the company?s strip layout to yield one of the world?s lowest on-resistance and gate charge. it is therefore suitable for the most demanding high efficiency converters. figure 1. internal schematic diagram order codes v dss @t jmax r ds(on) max. i d stp20nm65n 710 v 0.270 ? 15 a STF20NM65N to-220 to-220fp 1 2 3 1 2 3 !-v $ ' 3 table 1. device summary order codes marking package packaging stp20nm65n 20nm65n to-220 tubes STF20NM65N 20nm65n to-220fp tubes www.st.com
contents stp20nm65n, STF20NM65N 2/16 doc id 13845 rev 2 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristecs (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
stp20nm65n, STF20NM65N electrical ratings doc id 13845 rev 2 3/16 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit to-220 to-220fp v ds drain source voltage 650 v v gs gate source voltage 25 v i d drain current continuous t c =25 c 15 15 (1) 1. limited only by maximu m temperature allowed. a i d drain current continuous t c =100 c 9.45 a i dm (2) 2. pulse width limited by safe operating area. drain current pulsed 60 a p tot total dissipation at t c =25 c 125 30 w dv/dt (3) 3. i sd 15 a, di/dt 400 a/s, v ds peak v (br)dss , v dd = 80 % v (br)dss . peak diode recovery voltage slope 15 v/ns v iso insulation withstand voltage (rms) from all three leads to external heatsink (t=1 s; t c = 25 c) 2500 v t stg t j storage temperature max. operating junction temperature -55 to 150 150 c table 3. thermal data symbol parameters value unit to-220 to-220fp r thjc thermal resistance junction-case max. 1 4.17 c/w r thja thermal resistance junction-ambient max. 62.50 c/w t j max. lead temperature for soldering purposes 300 c table 4. avalanche characteristics symbol parameters value unit i as avalanche current, repetitive or not- repetitive (pulse width limited by tj max) 4a e as single pulse avalanche energy (starting t j = 25 c, i d = i ar , v dd = 50 v) 115 mj
electrical characteristics stp20nm65n, STF20NM65N 4/16 doc id 13845 rev 2 2 electrical characteristics (t c = 25 c unless otherwise specified). table 5. on/off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 1 ma, v gs = 0 650 v l dss zero gate voltage drain current (v gs =0) v ds = max rating v ds = max rating @ 125 c 1 100 a a l gss gate body leakage (v ds =0) v gs = 25 v, v ds =0 100 na v gs(th) gate threshold voltage i d = 250 a, v gs = v ds 234v r ds(on) static drain-source on resistance i d =7.5 a, v gs =10 v 0.250 0.270 ? table 6. dynamic symbol parameter test conditions min. typ. max. unit c iss c oss c rss input capacitance output capacitance reverse capacitance v ds = 50 v, f = 1mhz, v gs = 0 - 1280 110 10 - pf pf pf c oss eq (1) 1. c oss eq : defined as a constant equivalent capacit ance giving the same charging time as c oss when v ds increases from 0 to 80 % v dss . equivalent output capacitance v ds = 0 to v gs = 0 - 260 - pf r g intrinsic gate resistance f = 1mhz open drain - 4.8 - ? q g q gs q gd total gate charge gate source charge gate-drain charge v dd = 520 v, i d = 15 a, v gs = 10 v (see figure 16 ) - 44 8 22 - nc nc nc table 7. switching times symbol parameter test conditions min. typ. max. unit t d(on) t r turn-on delay time rise time v dd = 325 v, i d =7.5 a r g =4.7 ?, v gs =10 v (see figure 15 ) (see figure 20 ) - 15 13.5 - ns ns t d(off) t f turn-off-delay time fall time - 75 21 - ns ns
stp20nm65n, STF20NM65N electrical characteristics doc id 13845 rev 2 5/16 table 8. source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm (1) 1. pulse width limited by safe operating area. source drain current source drain current (pulsed) - 15 60 a a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5 %. forward on voltage i sd = 15 a, v gs = 0 - 1.6 v t rr reverse recovery time i sd = 15 a, di/dt = 100 a/s v dd = 60 v (see figure 17 ) - 455 ns q rr reverse recovery charge 5.5 nc i rrm reverse recovery current 24.5 a t rr reverse recovery time i sd =15 a, di/dt = 100 a/s v dd = 60 v, tj = 150 c (see figure 17 ) - 710 ns q rr reverse recovery charge 8 nc i rrm reverse recovery current 24 a
electrical characteristics stp20nm65n, STF20NM65N 6/16 doc id 13845 rev 2 2.1 electrical characterist ecs (curves) figure 2. safe operating area for to-220 figure 3. thermal impedance for to-220 figure 4. safe operating area for to-220fp figure 5. thermal impedance for to-220fp figure 6. output characteristics figure 7. transfer characteristics i d 10 1 0.1 0.1 1 100 v d s (v) 10 (a) oper a tion in thi s a re a i s limited b y m a x r d s (on) 10 s 100 s 1m s 10m s tj=150c tc=25c s ingle p u l s e am091 38 v1 i d 10 1 0.1 0.1 1 100 v d s (v) 10 (a) oper a tion in thi s a re a i s limited b y m a x r d s (on) 10 s 100 s 1m s 10m s tj=150c tc=25c s ingle p u l s e am091 3 9v1 i d 15 10 5 0 0 10 v d s (v) 20 (a) 5 15 20 25 5v 6v 4v v g s =10v 3 0 3 5 am09140v1 i d 15 10 5 0 0 4 v g s (v) 8 (a) 2 6 10 20 25 3 0 3 5 v d s =19v am09141v1
stp20nm65n, STF20NM65N electrical characteristics doc id 13845 rev 2 7/16 figure 8. normalized b vdss vs temperature figure 9. static drain-source on resistance figure 10. gate charge vs gate-source voltage figure 11. capacitance variations figure 12. normalized gate threshold voltage vs temperature figure 13. normalized on resistance vs temperature bv d ss -50 0 t j (c) (norm) -25 75 25 50 100 0.9 3 0.95 0.97 1.01 1.0 3 1.05 0.99 1.07 i d =1ma am09142v1 r d s (on) 0.245 0.240 0.2 3 5 0 4 i d (a) ( ? ) 2 6 0.250 0.255 v g s =10v 10 8 12 14 0.260 am0914 3 v1 v g s 6 4 2 0 0 10 q g (nc) (v) 40 8 20 3 0 10 v dd =520v i d =15a 50 12 3 00 200 100 0 400 500 v d s am09144v1 c 1000 100 10 1 0.1 10 v d s (v) (pf) 1 100 ci ss co ss cr ss am09145v1 v g s (th) 1.00 0.90 0. 8 0 0.70 -50 0 t j (c) (norm) -25 1.10 75 25 50 100 i d =250 a am09146v1 r d s (on) 1.9 1. 3 0.9 0.5 -50 0 t j (c) (norm) -25 75 25 50 100 0.7 1.1 1.5 1.7 2.1 i d =7.5a am09147v1
electrical characteristics stp20nm65n, STF20NM65N 8/16 doc id 13845 rev 2 figure 14. source-drain diode forward characteristics v s d 0 4 i s d (a) (v) 2 10 6 8 0.2 0.6 0. 8 1.2 1.4 1.0 t j =-50c t j =150c t j =25c 12 14 16 0.4 1.6 am0914 8 v1
stp20nm65n, STF20NM65N test circuits doc id 13845 rev 2 9/16 3 test circuits figure 15. switching times test circuit for resistive load figure 16. gate charge test circuit figure 17. test circuit for inductive load switching and diode recovery times figure 18. unclamped inductive load test circuit figure 19. unclamped inductive wavefo rm figure 20. switching time waveform am0146 8 v1 v g s p w v d r g r l d.u.t. 2200 f 3 . 3 f v dd am01469v1 v dd 47k ? 1k ? 47k ? 2.7k ? 1k ? 12v v i =20v=v gmax 2200 f p w i g =con s t 100 ? 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 ? a a b b r g g fa s t diode d s l=100 h f 3 . 3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3 . 3 f v dd am01472v1 v (br)d ss v dd v dd v d i dm i d am0147 3 v1 v d s t on td on td off t off t f t r 90 % 10 % 10 % 0 0 90 % 90 % 10 % v g s
package mechanical data stp20nm65n, STF20NM65N 10/16 doc id 13845 rev 2 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack specifications, grade definitions and product status are available at: www.st.com. ecopack is an st trademark.
stp20nm65n, STF20NM65N package mechanical data doc id 13845 rev 2 11/16 table 9. to-220 type a mechanical data dim. mm min. typ. max. a 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 d 15.25 15.75 d1 1.27 e10 10.40 e 2.40 2.70 e1 4.95 5.15 f 1.23 1.32 h1 6.20 6.60 j1 2.40 2.72 l13 14 l1 3.50 3.93 l20 16.40 l30 28.90 ? p 3.75 3.85 q 2.65 2.95
package mechanical data stp20nm65n, STF20NM65N 12/16 doc id 13845 rev 2 figure 21. to-220 type a drawing 00159 88 _typea_rev_ s
stp20nm65n, STF20NM65N package mechanical data doc id 13845 rev 2 13/16 table 10. to-220fp mechanical data dim. mm min. typ. max. a4.4 4.6 b2.5 2.7 d 2.5 2.75 e0.45 0.7 f0.75 1 f1 1.15 1.70 f2 1.15 1.70 g4.95 5.2 g1 2.4 2.7 h 10 10.4 l2 16 l3 28.6 30.6 l4 9.8 10.6 l5 2.9 3.6 l6 15.9 16.4 l7 9 9.3 dia 3 3.2
package mechanical data stp20nm65n, STF20NM65N 14/16 doc id 13845 rev 2 figure 22. to-220fp drawing 7012510_rev_k a b h di a l7 d e l6 l5 l2 l 3 l4 f1 f2 f g g1
stp20nm65n, STF20NM65N revision history doc id 13845 rev 2 15/16 5 revision history table 11. revision history date revision changes 12-sep-2007 1 initial release. 23-may-2011 2 updated chapter 4: package mechanical data .
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